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EbookBell Team
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ISBN 10: 3540210814
ISBN 13: 978-3540210818
Author: Howard Huff, David Gilmer
Classical Regime for SiO₂
Brief Notes on the History of Gate Dielectrics in MOS Devices
SiO₂ Based MOSFETs: Film Growth and Si—SiO₂ Interface Properties
Oxide Reliability Issues
The Economic Implications of Moore's Law
Transition to Silicon Oxynitrides
Gate Dielectric Scaling to 2.0—1.0 nm: SiO₂ and Silicon Oxynitride
Optimal Scaling Methodologies and Transistor Performance
Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation
Transition to High-k Gate Dielectrics
Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria
Materials Issues for High-k Gate Dielectric Selection and Integration
Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks
Electronic Structure of Alternative High-k Dielectrics
Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon
High-k Gate Dielectric Deposition Technologies
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices
CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials
Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films
Electrical Measurement Issues for Alternative Gate Stack Systems
High-k Gate Dielectric Materials Integrated Circuit Device Design Issues
Future Directions for Ultimate Scaling Technology Generations
High-k Crystalline Gate Dielectrics: A Research Perspective
High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective
Advanced MOS-Devices
high dielectric constant materials
rogers high dielectric constant materials
high dielectric constant materials list
high dielectric constant materials vlsi mosfet applications
high and low dielectric constant materials
Tags: Howard Huff, David Gilmer, High, Dielectric, Constant, Materials, VLSI, MOSFET, Applications
