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Materials for Information Technology Devices Interconnects and Packaging Engineering Materials and Processes 2005th Edition by Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick ISBN 1852339411 978-1852339418

  • SKU: BELL-2197644
Materials for Information Technology Devices Interconnects and Packaging Engineering Materials and Processes 2005th Edition by Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick ISBN 1852339411 978-1852339418
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Materials for Information Technology Devices Interconnects and Packaging Engineering Materials and Processes 2005th Edition by Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick ISBN 1852339411 978-1852339418 instant download after payment.

Publisher: Springer
File Extension: PDF
File size: 13.29 MB
Pages: 490
Author: Ehrenfried Zschech (Editor), Caroline Whelan (Editor), Thomas Mikolajick (Editor)
ISBN: 1852339411, 9781852339418
Language: English
Year: 2005
Edition: 1st Edition.

Product desciption

Materials for Information Technology Devices Interconnects and Packaging Engineering Materials and Processes 2005th Edition by Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick ISBN 1852339411 978-1852339418 by Ehrenfried Zschech (editor), Caroline Whelan (editor), Thomas Mikolajick (editor) 1852339411, 9781852339418 instant download after payment.

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Full download Materials for Information Technology Devices Interconnects and Packaging Engineering Materials and Processes 2005th Edition after payment

 

Product details:

ISBN 10: 1852339411

ISBN 13: 978-1852339418 

Author: Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick

This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries. 

Table of contents:

Front Matter

Recent Advances in Thin-film Deposition

  • Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS

  • LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs

  • Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices

  • Atomic-layer Deposited Barrier and Seed Layers for Interconnects

  • Copper CVD for Conformal Ultrathin-film Deposition

  • Pushing PVD to the Limits — Recent Advances

  • Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition

  • Selective Airgaps: Towards a Scalable Low-k Solution

  • Silicides — Recent Advances and Prospects

  • TEM Characterization of Strained Silicon

Material Aspects of Non-Volatile Memories

  • An Introduction to Nonvolatile Memory Technology

  • Floating-dot Memory Transistors on SOI Substrate

  • Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures

  • Scaling of Ferroelectric-based Memory Concepts

  • Device Concepts with Magnetic Tunnel Junctions

  • Phase-change Memories

  • Amorphous-to-fcc Transition in GeSbTe Alloys

  • Organic Nonvolatile Memories

Materials for Interconnects

  • Interconnect Technology — Today, Recent Advances and a Look into the Future

  • Dielectric and Scaling Effects on Electromigration for Cu Interconnects

  • Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction

  • Stress Modeling for Copper Interconnect Structures

  • Conductivity Enhancement in Metallization Structures of Regular Grains

  • Advanced Barriers for Copper Interconnects

  • Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings

  • Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion

  • Carbon Nanotube Via Technologies for Future LSI Interconnects

  • Nickel Nanowires Obtained by Template Synthesis

Materials for Assembly/Packaging

  • The Importance of Polymers in Wafer-Level Packaging

  • Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge

  • The Role of Au/Sn Solder in Packaging

  • Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics

  • Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding

Advanced Materials Characterization

  • Challenges to Advanced Materials Characterization for ULSI Applications

  • Advanced Material Characterization by TOFSIMS in Microelectronic

  • Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces

  • Materials Characterization by Ellipsometry

  • Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials

  • Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section

  • X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures

Back Matter

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Tags: Ehrenfried Zschech, Caroline Whelan, Thomas Mikolajick, Materials, Information, Technology, Devices, Interconnects, Packaging, Engineering, Processes

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