EbookBell.com

Most ebook files are in PDF format, so you can easily read them using various software such as Foxit Reader or directly on the Google Chrome browser.
Some ebook files are released by publishers in other formats such as .awz, .mobi, .epub, .fb2, etc. You may need to install specific software to read these formats on mobile/PC, such as Calibre.

Please read the tutorial at this link: https://ebookbell.com/faq

We offer FREE conversion to the popular formats you request; however, this may take some time. Therefore, right after payment, please email us, and we will try to provide the service as quickly as possible.

For some exceptional file formats or broken links (if any), please refrain from opening any disputes. Instead, email us first, and we will try to assist within a maximum of 6 hours.

EbookBell Team

Nanoscale MOS Transistors: Semi-Classical Transport and Applications David Esseni

Name: Nanoscale MOS Transistors: Semi-Classical Transport and Applications David Esseni
SKU: BELL-2191604
Price: 31.00 USD
Availability: InStock
Rating: 4 (6 reviews)

SKU: BELL-2191604

$ 31.00 ~~$ 45.00~~ (-31%)

4.0

6 reviews

Nanoscale MOS Transistors: Semi-Classical Transport and Applications David Esseni instant download after payment.

Publisher: Cambridge University Press

File Extension: PDF

File size: 3.71 MB

Pages: 490

Author: David Esseni, Pierpaolo Palestri, Luca Selmi

ISBN: 0521516846

Language: English

Year: 2011

Product desciption

Nanoscale MOS Transistors: Semi-Classical Transport and Applications David Esseni by David Esseni, Pierpaolo Palestri, Luca Selmi 0521516846 instant download after payment.

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results