EbookBell.com

Most ebook files are in PDF format, so you can easily read them using various software such as Foxit Reader or directly on the Google Chrome browser.
Some ebook files are released by publishers in other formats such as .awz, .mobi, .epub, .fb2, etc. You may need to install specific software to read these formats on mobile/PC, such as Calibre.

Please read the tutorial at this link: https://ebookbell.com/faq

We offer FREE conversion to the popular formats you request; however, this may take some time. Therefore, right after payment, please email us, and we will try to provide the service as quickly as possible.

For some exceptional file formats or broken links (if any), please refrain from opening any disputes. Instead, email us first, and we will try to assist within a maximum of 6 hours.

EbookBell Team

Silicon Nonvolatile Memories Paths Of Innovation 1st Edition B De Salvo

Name: Silicon Nonvolatile Memories Paths Of Innovation 1st Edition B De Salvo
SKU: BELL-1932990
Price: 31.00 USD
Availability: InStock
Rating: 4.4 (102 reviews)

SKU: BELL-1932990

$ 31.00 ~~$ 45.00~~ (-31%)

4.4

102 reviews

Silicon Nonvolatile Memories Paths Of Innovation 1st Edition B De Salvo instant download after payment.

Publisher: Wiley-ISTE

File Extension: PDF

File size: 6.8 MB

Pages: 248

Author: B. de Salvo

ISBN: 9781848211056, 1848211058

Language: English

Year: 2009

Edition: 1

Product desciption

Silicon Nonvolatile Memories Paths Of Innovation 1st Edition B De Salvo by B. De Salvo 9781848211056, 1848211058 instant download after payment.

This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different “evolutionary paths” based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. “Disruptive paths” are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.