Silicon Processing for the VLSI Era Vol 4 Deep Submicron Process Technology 1st Edition by Stanley Wolf ISBN 096167217X 9780961672171 by Stanley Wolf 096167217X instant download after payment.

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ISBN 10: 096167217X 
ISBN 13: 9780961672171
Author: Stanley Wolf

"Silicon Processing for the VLSI Era, Vol. 4: Deep-Submicron Process Technology" by Stanley Wolf is a highly specialized and comprehensive text. Based on its title and the context of the entire "Silicon Processing for the VLSI Era" series, Volume 4 would delve into the advanced fabrication techniques necessary for creating integrated circuits with feature sizes below the micron level.

Silicon Processing for the VLSI Era Vol 4 Deep Submicron Process Technology 1st Table of contents:

Part I: Introduction to Deep-Submicron Challenges

• Chapter 1: The Drive to Deep-Submicron Dimensions
  • Review of VLSI Scaling Trends (Moore's Law and its implications)
  • Physical Limits and Fundamental Challenges of Miniaturization
  • Economic and Performance Drivers for Deep-Submicron Technology
  • Overview of Key Process Technologies for Advanced Nodes
• Chapter 2: Device Physics and Scaling in Deep-Submicron MOSFETs
  • Short-Channel Effects (DIBL, punchthrough, hot carriers)
  • Threshold Voltage Roll-off and Body Effect
  • Gate Oxide Tunneling and Leakage
  • Mobility Degradation and Strain Engineering
  • Alternative Transistor Architectures (FinFETs, GAAFETs - if covered)

Part II: Advanced Lithography for Deep-Submicron

• Chapter 3: Extreme Ultraviolet (EUV) Lithography
  • Principles of EUV Light Generation and Optics
  • EUV Photoresists and Etching Challenges
  • Mask Technology for EUV
  • Infrastructure and System Requirements for EUV
  • Future Outlook for EUV Scaling
• Chapter 4: Immersion Lithography and Double Patterning
  • Enhancements to Optical Lithography
  • Principles and Implementation of Immersion Lithography
  • Multi-Patterning Techniques (LELE, SADP, SAQP)
  • Design-Technology Co-Optimization (DTCO) for Patterning
• Chapter 5: Alternative Lithography Techniques
  • Electron Beam Lithography (EBL)
  • Nanoimprint Lithography
  • Directed Self-Assembly (DSA)
  • X-ray Lithography (brief overview, historical context)

Part III: Advanced Etching and Deposition

• Chapter 6: Plasma Etching for Deep-Submicron Features
  • Advanced Plasma Sources and Chemistry
  • High Aspect Ratio Etching (HARC)
  • Atomic Layer Etching (ALE)
  • Etch Selectivity, Uniformity, and Damage Control
  • Challenges in Etching Novel Materials (e.g., high-k, metals)
• Chapter 7: Advanced Deposition Technologies
  • Atomic Layer Deposition (ALD) for High-k Dielectrics and Metals
  • Chemical Vapor Deposition (CVD) Enhancements (PECVD, HDPCVD)
  • Physical Vapor Deposition (PVD) for Interconnects
  • Epitaxial Growth for Strain Engineering and Device Fabrication
  • Area-Selective Deposition

Part IV: Interconnect and Backend-of-Line (BEOL) Processing

• Chapter 8: Metallization for Deep-Submicron Interconnects
  • Copper Interconnect Technology (Damascene Process)
  • Low-k Dielectrics and Integration Challenges
  • Diffusion Barriers and Adhesion Layers
  • Electromigration and Stress Migration in Cu Interconnects
  • Advanced Interconnect Architectures (e.g., hybrid bonding)
• Chapter 9: Chemical Mechanical Planarization (CMP)
  • Principles and Mechanisms of CMP
  • Slurry Chemistry and Pad Design
  • CMP for Dielectric and Metal Planarization
  • Defect Control and Metrology in CMP

Part V: Metrology, Characterization, and Process Control

• Chapter 10: Advanced Metrology for Deep-Submicron Technology
  • Critical Dimension (CD) Metrology (CD-SEM, OCD)
  • Defect Inspection and Review
  • Film Thickness and Composition Measurement (Ellipsometry, XRF)
  • Electrical Characterization of Devices and Materials
• Chapter 11: Process Control and Yield Management
  • Statistical Process Control (SPC)
  • Fault Detection and Classification (FDC)
  • Advanced Process Control (APC)
  • Yield Limiting Factors in Deep-Submicron Manufacturing
  • Design for Manufacturability (DFM) and Design-Technology Co-Optimization (DTCO)

Part VI: Novel Materials and Future Trends

• Chapter 12: New Materials for Deep-Submicron Devices
  • High-k Metal Gate (HKMG) Stack Integration
  • Strain-Engineered Silicon and Germanium
  • III-V and 2D Materials (Graphene, MoS2) for Future Devices
  • Advanced Packaging Materials
• Chapter 13: Future Directions and Emerging Technologies
  • 3D Integration and Wafer Bonding
  • Neuromorphic Computing and Quantum Computing (brief overview of fabrication aspects)
  • Sustainable Manufacturing in Semiconductor Industry
  • Roadmaps for Future Technology Nodes

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Tags: Stanley Wolf, Silicon, VLSI