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ISBN 13: 9783642063305
Author: Masanori Okuyama, Yoshihiro Ishibashi
Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films
Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films
PB-Based Ferroelectric Thin Films Prepared by MOCVD
Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi₄Ti₃O₁₂-Based Films
Rhombohedral PZT Thin Films Prepared by Sputtering
Scanning Nonlinear Dielectric Microscope
Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary
Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions
Relaxor Behaviors in Perovskite-Type Dielectric Compounds
Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O₃ by a Superlattice Technique
Physics of Ferroelectric Interface: An Attempt to Nano-Ferroelectric Physics
Preparation and Property of Ferroelectric-Insulator-Semiconductor Junction Using YMNO₃ Thin Film
Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure
strain tuning of ferroelectric thin films
solution processed transparent ferroelectric nylon thin films
atomic layer deposition of epitaxial ferroelectric hf0.5zr0.5o2 thin films
depolarization fields in thin ferroelectric films
improved ferroelectric switching endurance of la-doped hf0.5zr0.5o2 thin films
ferroelectric phase transitions in epitaxial antiferroelectric pbzro3 thin films
Tags: Masanori Okuyama, Yoshihiro Ishibashi, Ferroelectric, Films
