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Ferroelectric Thin Films Basic Properties And Device Physics For Memory Applications 1st Edition Yoshihiro Ishibashi Auth

  • SKU: BELL-2158168
Ferroelectric Thin Films Basic Properties And Device Physics For Memory Applications 1st Edition Yoshihiro Ishibashi Auth
$ 31.00 $ 45.00 (-31%)

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Ferroelectric Thin Films Basic Properties And Device Physics For Memory Applications 1st Edition Yoshihiro Ishibashi Auth instant download after payment.

Publisher: Springer-Verlag Berlin Heidelberg
File Extension: PDF
File size: 10.05 MB
Pages: 244
Author: Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)
ISBN: 3540241639
Language: English
Year: 2005
Edition: 1

Product desciption

Ferroelectric Thin Films Basic Properties And Device Physics For Memory Applications 1st Edition Yoshihiro Ishibashi Auth by Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.) 3540241639 instant download after payment.

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

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