Heterogeneous Integration Of Microwave And Millimeterwave Diodes On Silicon And Flex Substrates Amanpreet Kaur by Amanpreet Kaur instant download after payment.

Millimeter waves (MMW) are electromagnetic (EM) signal between microwave and far infrared, i.e., frequencies between 30GHz (10mm wavelength) and 300 GHz (1mm wavelength). It has applications in future high-speed communications, automotive collision avoidance and navigation, homeland security, and high speed chip interconnects. To make commercial MMW integrated circuits a reality, low cost approaches for wafer level integration
of all components (actives, passives, back end CMOS) is critically needed. The current state of art MMW circuits utilizes expensive compound semiconductors (CS) for active devices. To meet the future need, there is growing interest in heterogeneous integration of CS and other non-Si materials (novel materials) on large area, low-cost substrates such as Si, glass and flexible substrates. Integration compatibility with flexible substrate is of special interest for applications such as wearable medical and communication devices.This work focuses on three types of diodes: Graphene based diodes and Metal-Insulator-Metal (MIM) tunneling diode for low power applications and excimer laser synthesized Silicon Carbide/ Silicon (SiC/Si) heterojunction diodes for high
power devices.