Nanocmos And Postcmos Electronics Saraju P Mohanty Ashok Srivastava by Saraju P. Mohanty, Ashok Srivastava 9781849199971, 9781849199988, 1849199973, 1849199981 instant download after payment.

The demand for ever smaller and more portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nano-devices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor.
Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
Volume 1 explores these nano-electronics at the device level including modelling and design. Topics covered include high-K dielectric based devices; graphene transistors; high mobility n and p channels; anodic MIM capacitors; FinFET devices; reliability considerations of next-generation processors; timing driven buffer insertion for carbon nanotube interconnects; controllable-polarity nanowire transistors; carbon nanotubes for efficient power delivery; modelling of memristors at nanoscale; and neuromorphic devices